3 µm process

The 3 μm process is the level of MOSFET semiconductor process technology that was reached around 1977,[1][2] by leading semiconductor companies such as Intel.

Semiconductor
device
fabrication
MOSFET scaling
(process nodes)
Future

Products featuring 3 μm manufacturing process
  • Intel 8085 CPU launched in 1976 was manufactured using 3.2 μm NMOS (HMOS) process.[1]
  • Intel 8086 CPU launched in 1978 was manufactured using 3.2 μm NMOS (HMOS) process.[3]
  • Hitachi's 4 kbit HM6147 SRAM memory chip, launched in 1978, introduced the twin-well CMOS process, at 3 μm.[4]
  • Intel 8088 CPU launched in 1979 was manufactured using 3.2 μm NMOS (HMOS) process.[3]
  • Motorola 68000 (MC68000) CPU, launched in 1979, was originally fabricated using an HMOS process with a 3.5 μm feature size.[5]
  • The ARM1 was launched in 1985 and manufactured on a 3 μm process.[6]

References
  1. Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Retrieved 11 May 2012.
  2. Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister.
  3. "Archived copy". Archived from the original on 27 April 2015. Retrieved 5 January 2014.{{cite web}}: CS1 maint: archived copy as title (link)
  4. "1978: Double-well fast CMOS SRAM (Hitachi)" (PDF). Semiconductor History Museum of Japan. Archived from the original (PDF) on 5 July 2019. Retrieved 5 July 2019.
  5. Motorola 68000
  6. "ARM's Race to Embedded World Domination".
Preceded by
6 μm process		 MOSFET semiconductor device fabrication process Succeeded by
1.5 μm process


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